SiSMA - A tool for efficient analysis of analog CMOS integrated circuits affected by device mismatch

被引：10

作者：

Biagetti, G ^{[1
]}

Orcioni, S ^{[1
]}

Turchetti, C ^{[1
]}

Crippa, P ^{[1
]}

Alessandrini, M ^{[1
]}

机构：

[1] Univ Politecn Marche, Dipartimento Elettron Intelligenza Artificiale &, I-60131 Ancona, Italy

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2004年 / 23卷 / 02期

关键词：

device mismatch; metal-oxide-semiconductor integrated circuits (MOS ICs); modified nodal analysis (MNA); non-Monte Carlo analysis; statistical circuit analysis; stochastic simulation;

D O I：

10.1109/TCAD.2003.822131

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper a simulator for the statistical analysis of analog CMOS integrated circuits affected by technological tolerance effects, including device mismatch, is presented. The tool, able to perform dc, ac, and transient analyses, is based on a rigorous formulation of circuit equations starting from the modified nodal analysis and including random current sources to take into account technological tolerances. Statistical simulation of specific circuits shows that the simulator requires a simulation time several orders of magnitude lower than that required by Monte Carlo analysis, while ensuring a good accuracy.

引用

页码：192 / 207

页数：16

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