Non-Volatile Memory Based Page Swapping for Building High-Performance Mobile Devices

被引:22
|
作者
Liu, Duo [1 ,2 ]
Zhong, Kan [1 ,2 ]
Zhu, Xiao [1 ,2 ]
Li, Yang [1 ,2 ]
Long, Lingbo [3 ]
Shao, Zili [4 ]
机构
[1] Chongqing Univ, Coll Comp Sci, 174,Shazhengjie, Chongqing 400044, Peoples R China
[2] Chongqing Univ, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China
[3] Chongqing Univ Posts & Telecommun, Coll Comp Sci & Technol, Chongqing 400065, Peoples R China
[4] Hong Kong Polytech Univ, Dept Comp, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
Smartphone; swapping; non-volatile memory; application relaunching delay; PHASE-CHANGE MEMORY; MAIN MEMORY;
D O I
10.1109/TC.2017.2711620
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Smartphones are getting increasingly high-performance with advances in mobile processors and larger main memories to support feature-rich applications. However, the storage subsystem has always been a prohibitive factor that slows down the pace of reaching even higher performance while maintaining good user experience. Despite today's smartphones are equipped with larger-than-ever main memories, they consume more energy and still run out of memory. But the slow NAND flash based storage vetoes the possibility of swapping-an important technique to extend main memory-and leaves a system that constantly terminates user applications under memory pressure. In this paper, we propose NVM-Swap by revisiting swapping for smartphones with fast, byte-addressable, non-volatile memory (NVM) technologies. Instead of using flash, we build the swap area with NVM, to allow high performance without sacrificing user experience. NVM-Swap supports Lazy Swap-in, which can reduce memory copy operations by giving the swapped out pages a second chance to stay in byte-addressable NVM backed swap area. To avoid fast worn-out of certain NVM, we also propose Heap-Wear, a wear leveling algorithm that distributes writes in NVM more evenly. Evaluation results based on the Google Nexus 5 smartphone show that our solution can effectively enhance smartphone performance and achieve better wear-leveling of NVM.
引用
收藏
页码:1918 / 1931
页数:14
相关论文
共 50 条
  • [1] Building High-Performance Smartphones via Non-Volatile Memory: The Swap Approach
    Zhong, Kan
    Wang, Tianzheng
    Zhu, Xiao
    Long, Linbo
    Liu, Duo
    Liu, Weichen
    Shao, Zili
    Sha, Edwin H-M
    [J]. 2014 INTERNATIONAL CONFERENCE ON EMBEDDED SOFTWARE (EMSOFT), 2014,
  • [2] Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices
    Chiu, Yu-Cheng
    Sun, Han-Sheng
    Lee, Wen-Ya
    Halila, Sami
    Borsali, Redouane
    Chen, Wen-Chang
    [J]. ADVANCED MATERIALS, 2015, 27 (40) : 6257 - 6264
  • [3] High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes
    Khan, M. A.
    Bhansali, Unnat S.
    Alshareef, H. N.
    [J]. ADVANCED MATERIALS, 2012, 24 (16) : 2165 - 2170
  • [4] Non-volatile Unified Memory Page Management for Improving Performance
    Sharma, Ashok
    Nam, Sang-Jae
    Kim, Cheong-Ghil
    Kim, Shin-Dug
    [J]. 2014 INTERNATIONAL CONFERENCE ON IT CONVERGENCE AND SECURITY (ICITCS), 2014,
  • [5] Graphene Based Non-Volatile Memory Devices
    Wang, Xiaomu
    Xie, Weiguang
    Xu, Jian-Bin
    [J]. ADVANCED MATERIALS, 2014, 26 (31) : 5496 - 5503
  • [6] High-performance non-volatile transistor memory devices using charge-transfer supramolecular electrets
    Lo, Chen-Tsyr
    Wu, Hung-Chin
    Lee, Wen-Ya
    Chen, Wen-Chang
    [J]. REACTIVE & FUNCTIONAL POLYMERS, 2016, 108 : 31 - 38
  • [7] Non-volatile Memory Page Allocation Mechanism
    Xiong, Anping
    Bai, Weibi
    Long, Linbo
    Jiang, Yi
    [J]. 2020 6TH INTERNATIONAL CONFERENCE ON CONTROL, AUTOMATION AND ROBOTICS (ICCAR), 2020, : 21 - 26
  • [8] A nanowire transistor for high performance logic and terabit non-volatile memory devices
    Lee, Hyunjin
    Ryu, Seong-Wan
    Han, Jin-Woo
    Yu, Lee-Eun
    Im, Maesoon
    Kim, Chungjin
    Kim, Sungho
    Lee, Eujune
    Kim, Kuk-Hwan
    Kim, Ju-Hyun
    Bae, Dong-Il
    Jeon, Sang Cheol
    Kim, Kwang Hee
    Lee, Gi Sung
    Oh, Joe Sub
    Park, Yun Chang
    Bae, Woo Ho
    Yoo, Jung Jae
    Yang, Jun Mo
    Lee, Hee Mok
    Choi, Yang-Kyu
    [J]. 2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 144 - +
  • [9] Non-volatile memory devices based on Ge nanocrystals
    Vasilache, Dan
    Cismaru, Alina
    Dragoman, Mircea
    Stavarache, Ionel
    Palade, Catalin
    Lepadatu, Ana-Maria
    Ciurea, Magdalena Lidia
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (02): : 255 - 259
  • [10] Non-volatile Memory Devices Based on Chalcogenide Materials
    Wang, Fei
    Wu, Xiaolong
    [J]. PROCEEDINGS OF THE 2009 SIXTH INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY: NEW GENERATIONS, VOLS 1-3, 2009, : 5 - +