A nanowire transistor for high performance logic and terabit non-volatile memory devices

被引：17

作者：

Lee, Hyunjin ^{[1
]}

Ryu, Seong-Wan ^{[1
]}

Han, Jin-Woo ^{[1
]}

Yu, Lee-Eun ^{[1
]}

Im, Maesoon ^{[1
]}

Kim, Chungjin ^{[1
]}

Kim, Sungho ^{[1
]}

Lee, Eujune ^{[1
]}

Kim, Kuk-Hwan ^{[1
]}

Kim, Ju-Hyun ^{[1
]}

Bae, Dong-Il ^{[1
]}

Jeon, Sang Cheol ^{[2
]}

Kim, Kwang Hee ^{[2
]}

Lee, Gi Sung ^{[2
]}

Oh, Joe Sub ^{[2
]}

Park, Yun Chang ^{[2
]}

Bae, Woo Ho ^{[2
]}

Yoo, Jung Jae ^{[2
]}

Yang, Jun Mo ^{[2
]}

Lee, Hee Mok ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch EECS, Div EE, Daejeon 305701, South Korea

[2] Korean Natl Nanofab Ctr, Daejeon 305806, South Korea

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. N- and P-channel SiNAWI-FET showed the highest driving current on (110)/< 110 > crystal orientation without device rotation, whereas most 3-dimensional NMOS report higher driving current on 45 device rotation rather than 0 degrees. Utilizing an 7nm spherical nanowire on the 8nm SiNAWI-NVM with ONO structure, 1.7V V-T-window was achieved from 12V/80 mu sec program conditions with retention enhancement.

引用

页码：144 / +

页数：2

共 50 条

[1] Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices
Chiu, Yu-Cheng
Sun, Han-Sheng
Lee, Wen-Ya
Halila, Sami
Borsali, Redouane
Chen, Wen-Chang
[J]. ADVANCED MATERIALS, 2015, 27 (40) : 6257 - 6264
[2] Nanoimprint for future non-volatile memory and logic devices
Meier, M.
Nauenheim, C.
Gilles, S.
Mayer, D.
Kuegeler, C.
Waser, R.
[J]. MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 870 - 872
[3] High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate
Nedic, Stanko
Chun, Young Tea
Hong, Woong-Ki
Chu, Daping
Welland, Mark
[J]. APPLIED PHYSICS LETTERS, 2014, 104 (03)
[4] High-performance non-volatile transistor memory devices using charge-transfer supramolecular electrets
Lo, Chen-Tsyr
Wu, Hung-Chin
Lee, Wen-Ya
Chen, Wen-Chang
[J]. REACTIVE & FUNCTIONAL POLYMERS, 2016, 108 : 31 - 38
[5] Ferroelectric non-volatile logic devices
Takasu, H
Fujimori, Y
Nakamura, T
Kimura, H
Hanyu, T
Kameyama, M
[J]. INTEGRATED FERROELECTRICS, 2004, 61 : 83 - 88
[6] Ferroelectric non-volatile logic devices
Fujimori, Y
Nakamura, T
Takasu, H
Kimura, H
Hanyu, T
Kameyama, M
[J]. INTEGRATED FERROELECTRICS, 2003, 56 : 1003 - 1012
[7] Non-Volatile Transistor Memory with a Polypeptide Dielectric
Liang, Lijuan
He, Wenjuan
Cao, Rong
Wei, Xianfu
Uemura, Sei
Kamata, Toshihide
Nakamura, Kazuki
Ding, Changshuai
Liu, Xuying
Kobayashi, Norihisa
[J]. MOLECULES, 2020, 25 (03):
[8] GIMOS - A NON-VOLATILE MOS MEMORY TRANSISTOR
HSU, ST
[J]. RCA REVIEW, 1981, 42 (03): : 424 - 433
[9] Nanocrystal non-volatile memory devices
Horvath, Zs. J.
Basa, P.
[J]. THIN FILMS AND POROUS MATERIALS, 2009, 609 : 1 - 9
[10] Neobit® -: High reliable logic non-volatile memory (NVM)
Wang, RSC
Shen, RSJ
Hsu, CCH
[J]. IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 111 - 114

← 1 2 3 4 5 →