CNTFET based Transmission Gate Diffusion Input Logic (C-TGDI) design

被引：0

作者：

Yadav, Neetika ^{[1
,2
]}

Pandey, Neeta ^{[1
]}

Nand, Deva ^{[1
]}

机构：

[1] Delhi Technol Univ, Dept Elect & Commun Engn, Delhi 110042, India

[2] Am Inst Space Sci & Technol, Sect 125, Noida 201303, India

来源：

2021 5TH INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, COMMUNICATION, COMPUTER TECHNOLOGIES AND OPTIMIZATION TECHNIQUES (ICEECCOT) | 2021年

关键词：

Adder; CNTFET; GDI; TGDI;

D O I：

10.1109/ICEECCOT52851.2021.9707944

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper proposes Transmission Gate Diffusion Input (TGDI) based design using Carbon Nano tube Field Effect Transistors (CNTFETs). The performance of proposed design is analyzed for 2-input gates, 2:1 multiplexer(MUX), 1-bit full adder and 2-bit Ripple Carry Adder (RCA) in terms of delay, power and Power Delay Product (PDP). Simulative investigation is done at 32nm using HSPICE tool and comparison of performance of the proposed with GDI based CNTFET counterparts. Analysis of result shows that TGDI based CNTFET circuits offer benefits of less power and delay resulting in reduction of overall PDP in comparison with GDI based CNTFET circuits. A maximum PDP reduction of 77.23% and 81.92% for 2-input gates and multiplexer is achieved using the proposed approach respectively as compared to their GDI counterparts. Corresponding values are 67.79% and 21.35% for a 1-bit full adder and 2-bit RCA circuit respectively.

引用

页码：701 / 705

页数：5

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