GaAs and InP on Si with InGaP buffer layers

被引：0
|
作者：
Wehmann, HH [1 ]
Fehly, D [1 ]
Wullner, D [1 ]
Bonsch, P [1 ]
Schlachetzki, A [1 ]
Kudela, R [1 ]
机构：
[1] Tech Univ Braunschweig, Inst Halbleitertech, D-38023 Braunschweig, Germany
来源：
HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97 | 1998年 / 48卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：127 / 130
页数：4
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