GaAs and InP on Si with InGaP buffer layers

被引：0

作者：

Wehmann, HH ^{[1
]}

Fehly, D ^{[1
]}

Wullner, D ^{[1
]}

Bonsch, P ^{[1
]}

Schlachetzki, A ^{[1
]}

Kudela, R ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Halbleitertech, D-38023 Braunschweig, Germany

来源：

HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97 | 1998年 / 48卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：127 / 130

页数：4

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