1.1 kV vertical p-i-n GaN-on-sapphire diodes

被引：0
|
作者：
Harrison, Sara E. [1 ]
Shao, Qinghui [1 ]
Frye, Clint D. [1 ]
Voss, Lars F. [1 ]
Nikolic, Rebecca J. [1 ]
机构：
[1] Lawrence Livermore Natl Lab, 7000 East Avef, Livermore, CA 94550 USA
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：2
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