A compact model for early electromigration failures of copper dual-damascene interconnects

被引：23
|
作者：
de Orio, R. L. [1 ]
Ceric, H. [1 ]
Selberherr, S. [1 ]
机构：
[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期
基金：
奥地利科学基金会;
关键词：
STRESS EVOLUTION; NUCLEATION; LINES;
D O I：
10.1016/j.microrel.2011.07.049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1573 / 1577
页数：5
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