A resist material study for LWR and resolution improvement in EUV lithography

被引：24

作者：

Yamashita, Katsuhiro ^{[1
]}

Kamimura, Sou ^{[1
]}

Takahashi, Hidenori ^{[2
]}

Nishikawa, Naoyuki ^{[2
]}

机构：

[1] FUJIFILM Corp, R&D Management Headquarters, Elect Mat Res Labs, Shizuoka 4210396, Japan

[2] FUJIFILM Corp, R&D Management Headquarters, Synthet Organ Chem Labs, Shizuoka 4210396, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2008年 / 21卷 / 03期

关键词：

resist; acid generation efficiency; photo acid generator (PAG);

D O I：

10.2494/photopolymer.21.439

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

It had been reported that LWR and resolution were improved according to loading amount of quencher along with a decrease of sensitivity. Influences of quencher and PAG anion size on acid diffusion in acetal protected PHS-based polymer were examined and it was found that acid diffusion length is mainly controlled by quencher, resulting in the improvement of LWR and resolution as well as the decrease of sensitivity by way of reducing acid diffusion length. In order to compensate for the sensitivity loss, we investigated the effect of PAG structures and properties on acid generation and it was found that acid generation efficiency increased with the reduction potential of PAG. In this paper, we discussed bow to solve the dilemma among sensitivity, resolution and LWR in EUV lithography, by applying high-efficiency PAG under high quencher concentration.

引用

页码：439 / 442

页数：4

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