A resist material study for LWR and resolution improvement in EUV lithography

被引：24

作者：

Yamashita, Katsuhiro ^{[1
]}

Kamimura, Sou ^{[1
]}

Takahashi, Hidenori ^{[2
]}

Nishikawa, Naoyuki ^{[2
]}

机构：

[1] FUJIFILM Corp, R&D Management Headquarters, Elect Mat Res Labs, Shizuoka 4210396, Japan

[2] FUJIFILM Corp, R&D Management Headquarters, Synthet Organ Chem Labs, Shizuoka 4210396, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2008年 / 21卷 / 03期

关键词：

resist; acid generation efficiency; photo acid generator (PAG);

D O I：

10.2494/photopolymer.21.439

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

It had been reported that LWR and resolution were improved according to loading amount of quencher along with a decrease of sensitivity. Influences of quencher and PAG anion size on acid diffusion in acetal protected PHS-based polymer were examined and it was found that acid diffusion length is mainly controlled by quencher, resulting in the improvement of LWR and resolution as well as the decrease of sensitivity by way of reducing acid diffusion length. In order to compensate for the sensitivity loss, we investigated the effect of PAG structures and properties on acid generation and it was found that acid generation efficiency increased with the reduction potential of PAG. In this paper, we discussed bow to solve the dilemma among sensitivity, resolution and LWR in EUV lithography, by applying high-efficiency PAG under high quencher concentration.

引用

页码：439 / 442

页数：4

共 50 条

[31] Study on approaches for improvement of EUV-resist sensitivity
Tarutani, Shinji
Tsubaki, Hideaki
Takahashi, Hidenori
Itou, Takayuki
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
[32] Improvement of CD stability and defectivity in resist coating and developing process in EUV lithography process
Kamei, Yuya
Kawakami, Shinichiro
Tadokoro, Masahide
Hashimoto, Yusaku
Shimoaoki, Takeshi
Enomoto, Masashi
Nafus, Kathleen
Sonoda, Akihiro
Foubert, Philippe
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2018, 2018, 10809
[33] Exploration of alternative resist materials for EUV lithography
Santillan, Julius Joseph
Itani, Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (03)
[34] Multi-Trigger Resist for EUV lithography
Popescu, C.
O'Callaghan, G.
Storey, C.
McClelland, A.
Roth, J.
Jackson, E.
Robinson, A. P. G.
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2023, 36 (05) : 353 - 357
[35] LER evaluation of molecular resist for EUV lithography
Shiono, Daiju
Hada, Hideo
Yukawa, Hiroto
Oizumi, Hiroaki
Nishiyama, Iwao
Kojima, Kyoko
Fukuda, Hiroshi
MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1084 - 1087
[36] Evaluation of Novel Resist Materials for EUV Lithography
Aratani, Ichihiro
Matsunaga, Shuji
Kajiyashiki, Tsuyoshi
Watanabe, Takeo
Kinoshita, Hiroo
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
[37] EB and EUV lithography using inedible cellulose-based biomass resist material
Takei, Satoshi
Hanabata, Makoto
Oshima, Akihiro
Kashiwakura, Miki
Kozawa, Takahiro
Tagawa, Seiichi
ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIII, 2016, 9779
[38] Multi-trigger resist - Novel synthesis improvements for high resolution EUV lithography
O'Callaghan, G.
Popescu, C.
McClelland, A.
Kazazis, D.
Roth, J.
Theis, W.
Ekinci, Y.
Robinson, Alex P. G.
ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXVI, 2019, 10960
[39] EUV lithography using water-developable resist material derived from biomass
Takei, Satoshi
Oshima, Akihiro
Oyama, Tomoko G.
Ichikawa, Takumi
Sekiguchi, Atsushi
Kashiwakura, Miki
Kozawa, Takahiro
Tagawa, Seiichi
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXX, 2013, 8682
[40] The material design to reduce outgassing in acetal based chemically amplified resist for EUV lithography
Masuda, Seiya
Kawanishi, Yasutomo
Hirano, Shuuji
Kamimura, Sou
Mizutani, Kazuyoshi
Yasunami, Shoichiro
Kawabe, Yasumasa
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1515 - U1522

← 1 2 3 4 5 →