Atomic Electrostatic Maps of Point Defects in MoS2

被引:21
|
作者
Calderon, Sebastian, V [1 ]
Ferreira, Rafael V. [1 ,2 ,3 ]
Taneja, Deepyanti [4 ]
Raghavendrarao, Jayanth T. [4 ]
Zhou, Langyan [4 ]
Ribeiro, Ricardo M. [1 ,5 ]
Akinwande, Deji [4 ,6 ]
Ferreira, Paulo J. [1 ,2 ,3 ,6 ]
机构
[1] Int Iberian Nanotechnol Lab, INL, P-4715330 Braga, Portugal
[2] Univ Lisbon, Dept Mech Engn, Inst Super Tecn, P-1049001 Lisbon, Portugal
[3] Univ Lisbon, IDMEC, Inst Super Tecn, P-1049001 Lisbon, Portugal
[4] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
[5] Univ Minho, Dept & Ctr Phys, P-4710057 Braga, Portugal
[6] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
monolayer molybdenum disulfide; point defects; atomic resolution imaging; differential phase contrast; STEM;
D O I
10.1021/acs.nanolett.1c02334
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the atomic electrostatic fields of MoS2 monolayers and investigate the effect of sulfur monovacancies and divancancies on the atomic electric field and total charge distribution. A significant redistribution of the electric field in the regions containing defects is observed, with a progressive decrease in the strength of the projected electric field for each sulfur atom removed from its position. The electric field strength at the sulfur monovacancy sites is reduced by approximately 50% and nearly vanishes at the divacancy sites, where it drops to around 15% of the original value, demonstrating the tendency of these defects to attract positively charged ions or particles. In addition, the absence of the sulfur atoms leads to an inversion in the polarity of the total charge distribution in these regions.
引用
收藏
页码:10157 / 10164
页数:8
相关论文
共 50 条
  • [41] Controlling neutral and charged excitons in MoS2 with defects
    Burns, Kory
    Tan, Anne Marie Z.
    Gabriel, Adam
    Shao, Lin
    Hennig, Richard G.
    Aitkaliyeva, Assel
    JOURNAL OF MATERIALS RESEARCH, 2020, 35 (08) : 949 - 957
  • [42] Spatial defects nanoengineering for bipolar conductivity in MoS2
    Xiaorui Zheng
    Annalisa Calò
    Tengfei Cao
    Xiangyu Liu
    Zhujun Huang
    Paul Masih Das
    Marija Drndic
    Edoardo Albisetti
    Francesco Lavini
    Tai-De Li
    Vishal Narang
    William P. King
    John W. Harrold
    Michele Vittadello
    Carmela Aruta
    Davood Shahrjerdi
    Elisa Riedo
    Nature Communications, 11
  • [43] Atomic Layer Etching Mechanism of MoS2 for Nanodevices
    Kim, Ki Seok
    Kim, Ki Hyun
    Nam, Yeonsig
    Jeon, Jaeho
    Yim, Soonmin
    Singh, Eric
    Lee, Jin Yong
    Lee, Sung Joo
    Jung, Yeon Sik
    Yeom, Geun Young
    Kim, Dong Woo
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (13) : 11967 - 11976
  • [44] Edge Nonlinear Optics on a MoS2 Atomic Monolayer
    Yin, Xiaobo
    Ye, Ziliang
    Chenet, Daniel A.
    Ye, Yu
    O'Brien, Kevin
    Hone, James C.
    Zhang, Xiang
    SCIENCE, 2014, 344 (6183) : 488 - 490
  • [45] Observation of oscillations in the transport for atomic layer MoS2
    Xie, Xiao-Qiang
    Peng, Ying-Zi
    Zheng, Qi-Ye
    Li, Yuan
    Chen, Ji
    CHINESE PHYSICS B, 2018, 27 (02)
  • [46] Selective hydrodesulfurization of gasoline on Co/MoS2±x catalyst: Effect of sulfur defects in MoS2±x
    Li, Ping
    Liu, Xinyi
    Zhang, Cen
    Chen, Yandie
    Huang, Baokun
    Liu, Tiefeng
    Jiang, Zongxuan
    Li, Can
    APPLIED CATALYSIS A-GENERAL, 2016, 524 : 66 - 76
  • [47] Synthesis of MoS2 atomic layers using PECVD
    Kim, HyeongU
    Ahn, Chisung
    Arabale, Girish
    Lee, Changgu
    Kim, Taesung
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, 58 (08): : 47 - 50
  • [48] Observation of oscillations in the transport for atomic layer MoS2
    解晓强
    彭英姿
    郑奇烨
    李源
    陈吉
    Chinese Physics B, 2018, (02) : 606 - 610
  • [49] Atomic layer deposition of MoS2 thin films
    Browning, Robert
    Padigi, Prasanna
    Solanki, Raj
    Tweet, Douglas J.
    Schuele, Paul
    Evans, David
    MATERIALS RESEARCH EXPRESS, 2015, 2 (03)
  • [50] Formation and Diffusion of Intrinsic Point Defects in Bulk and Monolayer MoS2: First-Principles Study
    Gusakov, Vasilii
    Gusakova, Julia
    Tay, Beng Kang
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2022, 259 (08):