Hot-carrier noise under degenerate conditions

被引：0
|
作者：
Tadyszak, P [1 ]
Cappy, A [1 ]
Danneville, F [1 ]
Reggiani, L [1 ]
Varani, L [1 ]
Rota, L [1 ]
机构：
[1] INST ELECT & MICROELECT NORD,CNRS,UMR 9929,DEPT HYPERFREQUENCES & SEMICOND,F-59652 VILLENEUVE DASCQ,FRANCE
来源：
HOT CARRIERS IN SEMICONDUCTORS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：413 / 415
页数：3
相关论文
共 50 条
  • [31] Effects of impact ionization and Auger recombination on hot-carrier solar cells and hot-carrier photocatalysts
    Takeda, Yasuhiko
    Sato, Shunsuke
    Morikawa, Takeshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SK)
  • [32] Hot-carrier dynamics in catalysis
    Harutyunyan, Hayk
    Suchanek, Figen
    Lemasters, Robert
    Foley, Jonathan J.
    MRS BULLETIN, 2020, 45 (01) : 32 - 36
  • [33] HOT-CARRIER INSTABILITY IN IGFETS
    ABBAS, SA
    DOCKERTY, RC
    APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148
  • [34] HOT-CARRIER EFFECTS IN N-CHANNEL MOS-TRANSISTORS UNDER ALTERNATING STRESS CONDITIONS
    BELLENS, R
    HEREMANS, P
    GROESENEKEN, G
    MAES, HE
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 232 - 234
  • [35] Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit
    Kamrani, Hamed
    Jabs, Dominic
    d'Alessandro, Vincenzo
    Rinaldi, Niccolo
    Jacquet, Thomas
    Maneux, Cristell
    Zimmer, Thomas
    Aufinger, Klaus
    Jungemann, Christoph
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 923 - 929
  • [36] OFDM performance analysis in the phase noise arising from the hot-carrier effect
    Herlekar, Sameer R.
    Zhang, Chi
    Wu, Hsiao-Chun
    Srivastava, Ashok
    Wu, Yiyan
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2006, 52 (03) : 757 - 765
  • [37] AC hot-carrier degradation due to gate-pulse-induced noise
    Izawa, Ryuichi
    Umeda, Kazunori
    Takeda, Eiji
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1991, 74 (11): : 50 - 57
  • [38] Hot-carrier reliability of submicron NMOSFETs and integrated NMOS low noise amplifiers
    Naseh, S
    Deen, MJ
    Chen, CH
    MICROELECTRONICS RELIABILITY, 2006, 46 (2-4) : 201 - 212
  • [39] Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions (vol 49, pg 1588, 2002)
    Brederlow, R
    Weber, W
    Schmitt-Landsiedel, D
    Thewes, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (12) : 2373 - 2373
  • [40] Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers
    Naseh, S
    Deen, AJ
    Chen, CH
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) : 501 - 508
12345