Application of a new body contact to SOI LDMOSFET devices, three-dimensional simulation

被引：0

作者：

Daghighi, Arash ^{[1
]}

Osman, Mohamed A. ^{[2
]}

机构：

[1] Islamic Azad Univ Majlesi Branch, Dept Elect Engn, Esfahan, Iran

[2] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99163 USA

来源：

CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

SOI LDMOSFET; floating body effects; body contact; on-resistance; breakdown voltage; three-dimensional simulation; isothermal drift-diffusion model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (I-DS) was increased by 14% and current gain cut-off frequency (f(T)) by 10%. In addition, improved performance is achieved when comparing on-resistance (R-ON) and breakdown voltage (V-BR,). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.

引用

页码：529 / +

页数：2

共 50 条

[41] A Three-Dimensional DRAM Using Floating Body Capacitance Cells in an FD-SOI Process
Liu, Xuelian
Zia, Aamir
RADIOENGINEERING, 2013, 22 (04) : 975 - 984
[42] Application of Isogeometric Analysis Method in Three-Dimensional Gear Contact Analysis
Chen, Long
Yu, Yan
Shang, Yanpeng
Wang, Zhonghou
Zhang, Jing
CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, 2024, 139 (01): : 817 - 846
[43] A three-dimensional window into the body?
Bultitude, Matthew
BJU INTERNATIONAL, 2015, 115 (04) : 504 - 505
[44] Application of solderable devices for assembling three-dimensional power electronics modules
Lu, GQ
Liu, XS
PESC 2000: 31ST ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-3, 2000, : 1261 - 1266
[45] RF-SOI modeling: An accuracy body-contact RF-LDMOSFET large-signal model
Microelectronic CAD Center, Hangzhou Dianzi University, Hangzhou 310037, China
Pan Tao Ti Hsueh Pao, 2007, 11 (1786-1793): : 1786 - 1793
[46] Vertically-integrated three-dimensional SOI photodetectors
Culurciello, Eugenio
Weerakoon, Pujitha
2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 2498 - 2501
[47] Application of a new Hamiltonian of interaction to three-dimensional structures
Dolocan, A
Doloncan, VO
Dolocan, V
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (09): : 1351 - 1368
[48] Three-dimensional dynamic contact analysis of abrasive filaments with a multi -body system
Uhlmann, Eckart
Sommerfeld, Christian
51ST CIRP CONFERENCE ON MANUFACTURING SYSTEMS, 2018, 72 : 615 - 621
[49] Dynamic simulation of three-dimensional motion of the human arm and upper body
Chan, CYA
Thornton-Trump, AB
Weiss-Bundy, KMA
MODELLING IN MEDICINE AND BIOLOGY VI, 2005, 8 : 305 - 315
[50] Three-dimensional simulation of heavy-ion induced charge collection in SiGe HBTs on SOI
Varadharajaperumal, M
Niu, GF
Cressler, JD
Reed, RA
Marshall, PW
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3298 - 3303

← 1 2 3 4 5 →