Application of a new body contact to SOI LDMOSFET devices, three-dimensional simulation

Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (I-DS) was increased by 14% and current gain cut-off frequency (f(T)) by 10%. In addition, improved performance is achieved when comparing on-resistance (R-ON) and breakdown voltage (V-BR,). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.