Application of a new body contact to SOI LDMOSFET devices, three-dimensional simulation

被引：0

作者：

Daghighi, Arash ^{[1
]}

Osman, Mohamed A. ^{[2
]}

机构：

[1] Islamic Azad Univ Majlesi Branch, Dept Elect Engn, Esfahan, Iran

[2] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99163 USA

来源：

CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

SOI LDMOSFET; floating body effects; body contact; on-resistance; breakdown voltage; three-dimensional simulation; isothermal drift-diffusion model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (I-DS) was increased by 14% and current gain cut-off frequency (f(T)) by 10%. In addition, improved performance is achieved when comparing on-resistance (R-ON) and breakdown voltage (V-BR,). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.

引用

页码：529 / +

页数：2

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