Heterojunction Resonant Tunneling Diode at the Atomic Limit

被引：0
|
作者：
Ghosh, Ram Krishna [1 ]
Robinson, Joshua A. [2 ,3 ]
Lin, Yu-Chuan [2 ,3 ]
Datta, Suman [1 ]
机构：
[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Ctr Dimens & Layered Mat 2, University Pk, PA 16802 USA
来源：
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年
关键词：
heterostructure; tunneling; density functional theory; quantum transport; TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.
引用
收藏
页码：266 / 269
页数：4
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