Experimental demonstration of resonant-tunneling-diode operation beyond quasibound-state-lifetime limit

被引:0
|
作者
Feiginov, M. N. [1 ]
Chowdhury, D. Roy [2 ]
机构
[1] Tech Univ Darmstadt, D-64283 Darmstadt, Germany
[2] Univ Duisburg Essen, D-47057 Duisburg, Germany
关键词
TERAHERTZ;
D O I
10.1088/1742-6596/193/1/012016
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We show, first, that the charge relaxation (response) time of resonant-tunneling diode (RTD) can be significantly shorter or longer than the resonant-state lifetime, depending on RTD operating point and RTD parameters. Coulomb interaction of electrons is responsible for the effect. Second, we demonstrate that the operating frequencies of RTDs are limited neither by resonant-state lifetime, nor by relaxation time; particularly in the RTDs with heavily doped collector, the differential conductance can stay negative at the frequencies far beyond the limits imposed by both time constants. We provide experimental evidences for both effects.
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页数:4
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