Heterojunction Resonant Tunneling Diode at the Atomic Limit

被引：0

作者：

Ghosh, Ram Krishna ^{[1
]}

Robinson, Joshua A. ^{[2
,3
]}

Lin, Yu-Chuan ^{[2
,3
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Ctr Dimens & Layered Mat 2, University Pk, PA 16802 USA

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

heterostructure; tunneling; density functional theory; quantum transport; TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.

引用

页码：266 / 269

页数：4

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