Computational design of a (5, 0) CNT-InN nanotube heterojunction as a resonant tunneling diode

In this paper, transport properties of a heterojunction based on (5, 0) carbon nanotube and (5,0) indium nitride nanotube were investigated using Density Functional Theory combined with Non-Equilibrium Green’s Function formalisms. Based on the results reported here, under the low bias condition, Negative Differential Resistance (NDR) behavior could be observed due to the suppression of the conduction channels at a certain bias. The peaks and valleys in the transmission profile arising from resonant tunneling phenomenon confirmed the observed NDR. It, thus, appears that the (5, 0) CNT-InN nanotube heterojunction may be a favorable candidate for future nanoelectronic devices based on the resonant tunneling behavior.