Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator

被引：1
|
作者：
Uzun, Utku [1 ,2 ]
Lamuta, Caterina [2 ]
Yetmez, Mehmet [3 ]
机构：
[1] Tarsus Univ, Dept Aerosp Engn, TR-33400 Tarsus, Turkey
[2] Univ Iowa, Dept Mech Engn, Iowa City, IA 52242 USA
[3] Zonguldak Bulent Ecevit Univ, Dept Mech Engn, TR-67100 Zonguldak, Turkey
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2022年 / 259卷 / 04期
关键词：
activation volume; bismuth selenide; creep; single crystal; strain rate; strain rate sensitivity; STRAIN-RATE SENSITIVITY; HIGH-ENTROPY ALLOY; POWER-LAW CREEP; ACTIVATION VOLUME; ELASTIC-MODULUS; LOADING RATE; INDENTATION; ROOM; DEFORMATION; PARAMETERS;
D O I：
10.1002/pssb.202100481
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A single-crystal Bi2Se3 topological insulator is fabricated using the Bridgman-Stockbarger method. The crystal structure and atomic lattice parameters are identified by X-ray diffraction analysis. The nanoindentation size effect on creep displacement, activation volume, and strain rate sensitivity (SRS) with different maximum holding loads between 1000 and 5000 mu N is investigated using depth-sensing nanoindentation. Furthermore, the effect of the loading rate on the steady-state creep displacement and SRS is analyzed and discussed. Results show Bi2Se3's low resistance to plastic deformation and a significant increase of creep displacement with increasing holding load and holding rate. Additionally, creep strain rate, activation volume, and SRS are also calculated from the secondary stage creep, and results are compared with those of other flexible electronic materials.
引用
收藏
页数：9
相关论文
共 50 条
  • [31] Gas Doping on the Topological Insulator Bi2Se3 Surface
    Koleini, Mohammad
    Frauenheim, Thomas
    Yan, Binghai
    PHYSICAL REVIEW LETTERS, 2013, 110 (01)
  • [32] Superconductivity of the topological insulator Bi2Se3 at high pressure
    Kong, P. P.
    Zhang, J. L.
    Zhang, S. J.
    Zhu, J.
    Liu, Q. Q.
    Yu, R. C.
    Fang, Z.
    Jin, C. Q.
    Yang, W. G.
    Yu, X. H.
    Zhu, J. L.
    Zhao, Y. S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (36)
  • [33] Carrier transport in Bi2Se3 topological insulator slab
    Gupta, Gaurav
    Lin, Hsin
    Bansil, Arun
    Jalil, Mansoor Bin Abdul
    Liang, Gengchiau
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 74 : 10 - 19
  • [34] Complex band structure of topological insulator Bi2Se3
    Betancourt, J.
    Li, S.
    Dang, X.
    Burton, J. D.
    Tsymbal, E. Y.
    Velev, J. P.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (39)
  • [35] Terahertz Plasmonic Excitations in Bi2Se3 Topological Insulator
    Di Pietro, P.
    Autore, M.
    D'Apuzzo, F.
    Di Gaspare, A.
    Giorgianni, F.
    Limaj, O.
    Oh, S.
    Lupi, S.
    2014 8TH INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS (METAMATERIALS), 2014,
  • [36] Quantum frequency doubling in the topological insulator Bi2Se3
    Pan He
    Hiroki Isobe
    Dapeng Zhu
    Chuang-Han Hsu
    Liang Fu
    Hyunsoo Yang
    Nature Communications, 12
  • [37] Tailoring Magnetic Doping in the Topological Insulator Bi2Se3
    Zhang, Jian-Min
    Zhu, Wenguang
    Zhang, Ying
    Xiao, Di
    Yao, Yugui
    PHYSICAL REVIEW LETTERS, 2012, 109 (26)
  • [38] Nonlinear THz Plasmonics in Bi2Se3 Topological Insulator
    Di Pietro, P.
    Adhlakha, N.
    Piccirilli, F.
    Di Gaspare, A.
    Oh, S.
    Perucchi, A.
    Lupi, S.
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [39] A computational investigation of topological insulator Bi2Se3 film
    Yi-Bin Hu
    Yong-Hong Zhao
    Xue-Feng Wang
    Frontiers of Physics, 2014, 9 : 760 - 767
  • [40] Fabrication and characterization of topological insulator Bi2Se3 nanocrystals
    Zhao, S. Y. F.
    Beekman, C.
    Sandilands, L. J.
    Bashucky, J. E. J.
    Kwok, D.
    Lee, N.
    LaForge, A. D.
    Cheong, S. W.
    Burch, K. S.
    APPLIED PHYSICS LETTERS, 2011, 98 (14)
12345