Terahertz Plasmonic Excitations in Bi2Se3 Topological Insulator

被引:0
|
作者
Di Pietro, P. [1 ]
Autore, M. [2 ,7 ]
D'Apuzzo, F. [3 ,8 ]
Di Gaspare, A. [4 ]
Giorgianni, F. [2 ,7 ]
Limaj, O. [5 ]
Oh, S. [6 ]
Lupi, S. [2 ,7 ]
机构
[1] Sincrotrone Trieste SCpA, SS 14 Km 163-5,Area Sci Pk, I-34012 Trieste, Italy
[2] Univ Rome Sapienza, Dept Phys, I-00185 Rome, Italy
[3] Univ Rome Sapienza, Dept Phys, I-00185 Rome, Italy
[4] LNF INFN, I-00044 Frascati, Italy
[5] Ecole Polytech Federale Lausanne, Inst Bioengineering, Lausanne, Switzerland
[6] State Univ New Jersey, Dept Phys & Astron, Rutgers, NJ 08854 USA
[7] INFN, I-00185 Rome, Italy
[8] IIT, Rome, Italy
关键词
GRAPHENE PLASMONICS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Plasmons in the terahertz (THz) range have been observed in Bi2Se3 topological insulator films patterned in form of micro-structures. These plasmons have been assigned to collective excitations of massless Dirac carriers located onto the Bi2Se3 topological surfaces. Their lifetime is mainly determined by the single-particle scattering rate and results scarcely dependent on temperature as expected for topological carriers.
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页数:3
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