Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

被引：74

作者：

Tahara, Daisuke ^{[1
]}

Nishinaka, Hiroyuki ^{[2
]}

Morimoto, Shota ^{[1
]}

Yoshimoto, Masahiro ^{[2
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

[2] Kyoto Inst Technol, Fac Elect Engn & Elect, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 07期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; GALLIUM OXIDE; GA2O3; LAYERS;

D O I：

10.7567/JJAP.56.078004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial epsilon-Ga2O3 thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2 theta-omega and phi scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) epsilon-Ga2O3[10 (1) over bar0] vertical bar vertical bar (0001)AlN[10 (1) over bar0]. The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55-3.7 eV; however, no band-edge emission was observed. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

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