Electromagnetic modelling and analysis of RF MEMS capacitive shunt switch for 5G applications

被引：9
|
作者：
Chand, Ch Gopi [1 ]
Maity, Reshmi [1 ]
Rao, Srinivasa K. [2 ]
Maity, N. P. [1 ]
机构：
[1] Mizoram Univ, Dept Elect & Commun Engn, Aizwal 796001, Mizoram, India
[2] Koneru Lakshmaiah Educ Fdn Deemed Univ, MEMS Res Ctr, Dept Elect & Commun Engn, Guntur 522502, Andhra Pradesh, India
来源：
MICROELECTRONICS JOURNAL | 2021年 / 117卷
关键词：
RF MEMS Shunt switch; HFSS Tool; RF-Performance (return; insertion loss and isolation); VOLTAGE; DESIGN;
D O I：
10.1016/j.mejo.2021.105262
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The Sparameters are investigated with different analysis such as changing beam structure, materials, thickness of the beam, and signal dielectric. The pull-in voltage of the proposed switch is obtained as 1.9 V. The RF-performance mainly depends on the up and down state of the switch, these analysis are done in the ANSYS HFSS simulator tool. The evaluated return and insertion losses are -44.7486 dB and -0.9598 dB, and the switch exhibits a good isolation of -49.1809 dB at 43 GHz frequency. RF-Performance is obtained at 26-45 GHz range. So, the proposed switch can be applicable for 5G applications.
引用
收藏
页数：9
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