High resolution x-ray scattering investigation of Pt/LaF3/Si(111) structures

被引：2
|
作者：
Fanchenko, SS
Jedrecy, N
Moritz, W
Nefedov, AA
机构：
[1] RRC Kurchatov Inst, Moscow 123182, Russia
[2] Ctr Univ Orsay, CNRS, CEA, LURE, F-91405 Orsay, France
[3] Humboldt Univ, D-10117 Berlin, Germany
来源：
PHYSICA B | 1998年 / 248卷
关键词：
X-ray scattering; Pt/LaF3/Si samples;
D O I：
10.1016/S0921-4526(98)00201-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recently developed high resolution X-ray methods have been used to characterize the structure of Pt/LaF3/Si samples. The asymptotic Bragg diffraction is used for the study of the LaF3/Si interface and the grazing-incidence X-ray diffraction (GIXD) for the study of the LaF3, texture. The LaF3/Si interface was found to be thin and smooth with the interface thickness value 0.55 +/- 0.1 nm. The essential extra-broadening of the main peak in diffraction experiments for samples with the top platinum layer is explained by the small angle scattering of the X-ray beam on the rough Pt film. The LaF3-film domain structure is derived from GIXD data. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：48 / 52
页数：5
相关论文
共 50 条
  • [1] High resolution X-ray scattering investigation of Pt/LaF3/Si(1 1 1) structures
    RRC Kurchatov Inst, Moscow, Russia
    Phys B Condens Matter, (48-52):
  • [2] Time evolution of three-crystal x-ray spectra during fluorination of a Pt/LaF3/Si structure
    Nefedov, AA
    Sbitnev, SE
    Fanchenko, SS
    TECHNICAL PHYSICS LETTERS, 1998, 24 (07) : 554 - 555
  • [3] Time evolution of three-crystal X-ray spectra during fluorination of a Pt/LaF3/Si structure
    A. A. Nefedov
    S. E. Sbitnev
    S. S. Fanchenko
    Technical Physics Letters, 1998, 24 : 554 - 555
  • [4] HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY ON THE LAF3/SI(111) HETEROSTRUCTURE
    STRUMPLER, R
    LUTH, H
    SURFACE SCIENCE, 1990, 235 (2-3) : 223 - 227
  • [5] Ultrathin and transparent Ce/Tb codoped LaF3 scintillator films for high resolution X-ray microscopic imaging
    Zhang, Qi
    Zhao, Guoyu
    Zhao, Qingxian
    Wei, Xian
    Wei, Wei
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2024, 642
  • [6] THE STRUCTURE OF THIN EPITAXIAL LAF3 FILMS ON SI(111)
    STRUMPLER, R
    GUGGI, D
    LUTH, H
    THIN SOLID FILMS, 1991, 198 (1-2) : 221 - 232
  • [7] High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF3 Superionic Conductor Thin Films on Si
    Koshmak, K.
    Banshchikov, A.
    Vergentev, T.
    Montecchi, M.
    Ceolin, D.
    Rueff, J. P.
    Sokolov, N. S.
    Pasquali, L.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (19): : 10122 - 10130
  • [8] High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE
    Chaaben, N.
    Boufaden, T.
    Fouzri, A.
    Bergaoui, M. S.
    El Jani, B.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 241 - 245
  • [9] PHOTOEMISSION-STUDY OF THE GROWTH OF THE LAF3 SI (111) INTERFACE
    MALTEN, C
    CRAMM, S
    COLBOW, KM
    EBERHARDT, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02): : 418 - 422
  • [10] A STUDY OF THE LAF3/SI(111) INTERFACE USING UPS AND XPS
    GRIFFITHS, CL
    WILLIAMS, RH
    PHYSICA SCRIPTA, 1990, 41 (06): : 919 - 923
12345