Observation of RHEED rocking curves during Si/Si(111) film growth

In order to study the growth mechanism of Si/Si(111), we have measured the rocking curves of reflection high-energy electron diffraction (RHEED) during the growth by using a magnetic deflector to change the glancing angle. Diffraction patterns were recorded on a laser video disc, via a television camera, at each glancing angle. The results observed during growth with the sample held at 250 degrees C under a "one beam condition" were compared to a calculated curve, derived from the surface morphology at each growth stage which had been measured with scanning tunneling microscopy. The experimental data are not in good agreement with calculated curves. Better agreement is obtained when the presence of a two-dimensional atomic Si gas is taken into consideration. (C) 1998 Elsevier Science B.V. All rights reserved.