Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation

被引：0
|
作者：
Zhu, Hui-Ping [1 ,2 ]
Chen, Xi [1 ,2 ,4 ]
Zheng, Zhong-Shan [1 ,2 ]
Li, Bo [1 ,2 ]
Gao, Jian-Tou [1 ]
Li, Duo-Li [1 ]
Luo, Jia-Jun [1 ,2 ]
Han, Zheng-Sheng [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] North China Univ Technol, Dept Microelect, Beijing 100144, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total dose effect and its dependence on the thickness of Al2O3 gate dielectrics prepared by the atomic layer deposition (ALD) process have been investigated with various gamma-ray irradiation,doses, based on the MOS structure of Al/Al2O3/Si and corresponding high frequency capacitance-voltage (C-V) characterization. The results show that there is a close relationship between the radiation hardness and thickness of the Al2O3 dielectrics, and a thinner Al2O3 dielectric is more sensitive to total dose irradiation than thicker ones.
引用
收藏
页码：102 / 104
页数：3
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