A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact

被引：0
|
作者：
Lee, SeungGeun [1 ]
Forman, Charles A. [2 ]
Lee, Changmin [2 ]
Kearns, Jared [2 ]
Leonard, John T. [2 ]
Cohen, Daniel A. [2 ]
Speck, James S. [2 ]
Nakamura, Shuji [1 ,2 ]
DenBaars, Steven P. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
来源：
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated a violet III-nitride vertical-cavity surface-emitting laser (VCSEL) with a GaN tunnel junction (TJ) contact grown by a metalorganic chemical vapor deposition (MOCVD) technique. A peak output power of 319 uW was achieved.
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页数：2
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