3D modeling of graphene oxide based nanoelectromechanical capacitive switch

被引:9
|
作者
Chaudhary, Rekha [1 ]
Mudimela, Prasantha R. [1 ]
机构
[1] Lovely Profess Univ, Jalandhar 144411, Punjab, India
关键词
RF-MEMS SWITCHES; PULL-IN; SIMULATION;
D O I
10.1007/s00542-020-04880-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present work deals with 3D modeling of a novel configuration of a double clamped nanoelectromechanical (NEM) capacitive switch. In the proposed work, graphene oxide (GO) as a dielectric has been used as suspended beam material in NEM switch for the first time. Analysis of von Mises stress, pull-in, and pull-out voltages are investigated using COMSOL Multiphysics, for standard and perforated GO NEM switch structures. The actuation voltages of 5.4 V and 3.35 V are evaluated for standard and perforated beam structures respectively for the beam lengths of 1 mu m and widths of 0.3 mu m. The actuation voltage and von Mises stress value have reduced by making perforations in the beam. The von Mises stress comparative analysis of GO and graphene NEM switch exhibits that GO is a better choice for beam material as GO NEM switch withstand less von Mises stress than graphene NEM switch. The variation in capacitance including the fringing field capacitance is calculated as the beam is pulled down by the actuating electrode.
引用
收藏
页码:2931 / 2937
页数:7
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