Reliability of Silicon Avalanche Photodetector in Geiger mode

被引：0
|
作者：
Zuo, Y. H. [1 ,2 ]
Liu, T. R. [1 ,2 ]
Zhou, L. [1 ,2 ]
Zheng, J. [1 ,2 ]
Li, C. B. [2 ,3 ]
Cheng, B. W. [1 ,2 ]
Wang, Q. M. [1 ,2 ]
Liu, Q. L. [4 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China
[3] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China
[4] Beijing Univ Technol, Sch Informat, Beijing 100124, Peoples R China
来源：
SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 | 2018年 / 86卷 / 07期
基金：
北京市自然科学基金;
关键词：
D O I：
10.1149/08607.0139ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Due to high gain, Avalanche Photodetector (APD) in Geiger mode can detect single-photon signal. In this paper, a method for assessing the reliability of silicon APDs in Geiger mode is proposed, including the rapid estimation of APD fault activation energy (Ea), the analysis of APD failure mechanisms and assessment of lifetime. The test time and temperature interval were optimized using Arrhenius formula according to the stress limit and failure activation energy. Compared to 980,000h, the expected lifetime of our samples, the test time is greatly shortened, proving the high efficiency of our method. The main cause of fail may be the increase of surface leakage current, which will be verified in subsequent tests. Failure rate increases with time in wear out phase, and strongly depends on the structure of the device. Therefore, it is of great significance to improve the device design.
引用
收藏
页码：139 / 142
页数：4
相关论文
共 50 条
  • [31] Silicon Photonics Avalanche Photodetector Behavioral Model
    Youn, Jinsung
    Sun, Peng
    Jain, Mudit
    Fiorentino, Marco
    Beausoleil, Raymond G.
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXX, 2022, 11995
  • [32] Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements
    Jackson, JC
    Phelan, D
    Morrison, AP
    Redfern, RM
    Mathewson, A
    PHOTODETECTOR MATERIALS AND DEVICES VII, 2002, 4650 : 55 - 66
  • [33] Geiger-mode avalanche photodiodes, history, properties and problems
    Renker, D.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 567 (01): : 48 - 56
  • [34] Exponential time response in analogue and Geiger mode avalanche photodiodes
    Groves, C
    Tan, CH
    David, JPR
    Rees, GJ
    Hayat, MM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1527 - 1534
  • [35] Development of a bias power supply for Geiger mode avalanche photodiodes
    Yinjie Meng
    Zhengjun Wei
    Ziling Yan
    Jindong Wang
    Optoelectronics Letters, 2023, 19 : 659 - 665
  • [36] Investigation and analysis of time response in Geiger mode avalanche photodiode
    Dehghan, M.
    Ahmadi, V.
    Darabi, E.
    OPTICA APPLICATA, 2010, 40 (02) : 471 - 479
  • [37] Development of a bias power supply for Geiger mode avalanche photodiodes
    MENG Yinjie
    WEI Zhengjun
    YAN Ziling
    WANG Jindong
    Optoelectronics Letters, 2023, 19 (11) : 659 - 665
  • [38] Spectral Analysis of the Current of Avalanche Photodiodes Working in the Geiger Mode
    Santabaia Cavalcanti, Maria Daniela
    Mendonca, Fabio Alencar
    Ramos, Rubens Viana
    2009 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC 2009), 2009, : 695 - +
  • [39] GaN avalanche photodiodes operating in linear-gain mode and Geiger mode
    Verghese, S
    McIntosh, KA
    Molnar, RJ
    Mahoney, LJ
    Aggarwal, RL
    Geis, MW
    Molvar, KM
    Duerr, EK
    Melngailis, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 502 - 511
  • [40] Geiger-mode avalanche photodiodes at 2 μm wavelength
    Duerr, E. K.
    Manfra, M. J.
    Diagne, M. A.
    Bailey, R. J.
    Donnelly, J. P.
    Connors, M. K.
    Turner, G. W.
    APPLIED PHYSICS LETTERS, 2007, 91 (23)
12345