Reliability of Silicon Avalanche Photodetector in Geiger mode

被引：0

作者：

Zuo, Y. H. ^{[1
,2
]}

Liu, T. R. ^{[1
,2
]}

Zhou, L. ^{[1
,2
]}

Zheng, J. ^{[1
,2
]}

Li, C. B. ^{[2
,3
]}

Cheng, B. W. ^{[1
,2
]}

Wang, Q. M. ^{[1
,2
]}

Liu, Q. L. ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China

[3] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China

[4] Beijing Univ Technol, Sch Informat, Beijing 100124, Peoples R China

来源：

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 | 2018年 / 86卷 / 07期

基金：

北京市自然科学基金;

关键词：

D O I：

10.1149/08607.0139ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Due to high gain, Avalanche Photodetector (APD) in Geiger mode can detect single-photon signal. In this paper, a method for assessing the reliability of silicon APDs in Geiger mode is proposed, including the rapid estimation of APD fault activation energy (Ea), the analysis of APD failure mechanisms and assessment of lifetime. The test time and temperature interval were optimized using Arrhenius formula according to the stress limit and failure activation energy. Compared to 980,000h, the expected lifetime of our samples, the test time is greatly shortened, proving the high efficiency of our method. The main cause of fail may be the increase of surface leakage current, which will be verified in subsequent tests. Failure rate increases with time in wear out phase, and strongly depends on the structure of the device. Therefore, it is of great significance to improve the device design.

引用

页码：139 / 142

页数：4

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