In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(001)-4 x 6 surface

被引：17

作者：

Chang, Y. H. ^{[2
]}

Huang, M. L. ^{[3
]}

Chang, P. ^{[2
]}

Shen, J. Y. ^{[2
]}

Chen, B. R. ^{[2
]}

Hsu, C. L. ^{[2
]}

Pi, T. W. ^{[1
]}

Hong, M. ^{[2
]}

Kwo, J. ^{[3
,4
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

Atomic layer deposition; Molecular beam epitaxy; Synchrotron-radiation photoemission; GaAs; HIGH-KAPPA DIELECTRICS; PASSIVATION; GAAS; OXIDE; CAPACITORS;

D O I：

10.1016/j.mee.2011.03.064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents the in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and synchrotron-radiation photoemission studies for the morphological and interfacial chemical characterization of in situ atomic layer deposited (ALD) Al2O3 on pristine molecular beam epitaxy (MBE) grown Ga-rich n-GaAs (1 0 0)-4 x 6 surface. Both the RHEED pattern and STM image demonstrated that the first cycle of ALD-Al2O3 process reacted immediately with the GaAs surface. As revealed by in situ synchrotron-radiation photoemission studies, two types of surface As atoms that have excess in charge in the clean surface served as reaction sites with TMA. Two oxidized states were then induced in the As 3d core-level spectra with chemical shifts of +660 meV and +1.03 eV, respectively. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1101 / 1104

页数：4

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