Stoichiometry study of S-terminated GaAs(001)-(2 x 6) surface with synchrotron radiation photoelectron spectroscopy

被引:5
|
作者
Shimoda, M
Tsukamoto, S
Ohno, T
Koguchi, N
Sugiyama, M
Maeyama, S
Watanabe, Y
机构
[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
[2] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
关键词
synchrotron radiation photoelectron spectroscopy; surface structure; gallium arsenide; sulfur; adatoms;
D O I
10.1143/JJAP.39.3943
中图分类号
O59 [应用物理学];
学科分类号
摘要
Synchrotron radiation photoelectron spectroscopy (SRPES) has been performed to investigate the surface stoichiometry of the S-terminated GaAs(001)-(2 x 6), and in particular, to determine the chemical species of the five dimers, which are separated by missing dimers and from the unit structure of the (2 x 6) reconstruction. The S 2p photoemission spectra show a significant decrease in the peak intensity with increasing substrate temperature, whereas no significant changes are observed for the As 3d photoemission spectra The Ga 3d spectra are decomposed into a bulk component and more than one surface component, one of which is attributed to a Ga-S bond and decreases in accordance with the change observed in the S 2p spectra. These results strongly support the model that each pair of the five dimers in the (2 x 6) reconstruction consists of S-S dimers.
引用
收藏
页码:3943 / 3946
页数:4
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