Influence of the Ratio of Gate Length to Source-Drain Distance on the Sensitivity of the AlGaN/GaN HEMT Based Chemical Sensors and Biosensors

被引：0

作者：

Xue, Dongyang ^{[1
]}

Zhang, Heqiu ^{[1
]}

Liang, Hongwei ^{[1
]}

Liu, Jun ^{[1
]}

Xia, Xiaochuan ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Microelect, Dalian, Peoples R China

来源：

ELEVENTH INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING SYSTEMS | 2019年 / 11384卷

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; chemical sensors and biosensors; transconductance; ratio of gate length to source-drain distance;

D O I：

10.1117/12.2559622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the mechanism of the open-gate AlGaN/GaN HEMT based sensors were discussed and the effect of the ratio of gate length (L-G) to source-drain distance (L-SD) on the transconductance (g(m)) of the sensors was investigated. It was shown that the smaller L-G/L-SD of the devices would get a higher maximum g(m) (g(m-max)). However, when the gate voltage (V-G) increased to a certain extent, the g(m) of the larger L-G/L-SD devices would be higher. The experimental results were demonstrated by further theoretical calculation and analysis which is beneficial to enhance the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors by improving the g(m) of them.

引用

页数：5

共 37 条

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