Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

One-dimensional (1D) In2O3(ZnO)(m) superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In2O3(ZnO)(m) superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm 1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)(m) nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.