Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

被引：4

作者：

Tang Xin-Yue ^{[1
]}

Gao Hong ^{[1
]}

Wu Li-Li ^{[2
]}

Wen Jing ^{[1
]}

Pan Si-Ming ^{[1
]}

Liu Xin ^{[1
]}

Zhang Xi-Tian ^{[1
]}

机构：

[1] Harbin Normal Univ, Key Lab Photon & Elect Bandgap Mat, Minist Educ, Sch Phys & Elect Engn, Harbin 150025, Peoples R China

[2] Heilongjiang Univ Sci & Technol, Ctr Engn Training & Basic Experimentat, Harbin 150022, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 02期

基金：

中国国家自然科学基金;

关键词：

In2O3(ZnO)(m); superlattice; electrical properties; ZINC-OXIDE; NANOWIRES;

D O I：

10.1088/1674-1056/24/2/027305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

One-dimensional (1D) In2O3(ZnO)(m) superlattice nanobelts are synthesized by a chemical vapor deposition method. The formation of the In2O3(ZnO)(m) superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm 1 is found in the Raman spectrum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)(m) nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in the photocurrent property between them, and their transport mechanisms are also discussed.

引用

页数：5

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