Mass transport and powder source evolution in sublimation growth of SiC bulk crystals

被引：14
|
作者：
Karpov, DS
Bord, OV
Karpov, SY
Zhmakin, AI
Ramm, MS
Makarov, YN
机构：
[1] Soft Impact Ltd, RU-194156 St Petersburg, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia
[3] Univ Erlangen Nurnberg, Inst Fluid Mech, DE-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
evolution; graphitization; growth rate; porosity; powder charge;
D O I：
10.4028/www.scientific.net/MSF.353-356.37
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we study mass transport in SiC powder charge, employed as a source of reactive species in SiC bulk crystal growth, coupled with the species transport in the clearance between the powder and the seed. The study is aimed at finding correlation between growth conditions and powder evolution during a long-term growth process. We also examine how the growth conditions and the powder properties (porosity and mean size of SiC granule) influence SIC growth rate at the seed. The theoretical results are compared with available experimental data.
引用
收藏
页码：37 / 40
页数：4
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