Mass transport and powder source evolution in sublimation growth of SiC bulk crystals

被引：14
|
作者：
Karpov, DS
Bord, OV
Karpov, SY
Zhmakin, AI
Ramm, MS
Makarov, YN
机构：
[1] Soft Impact Ltd, RU-194156 St Petersburg, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia
[3] Univ Erlangen Nurnberg, Inst Fluid Mech, DE-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
evolution; graphitization; growth rate; porosity; powder charge;
D O I：
10.4028/www.scientific.net/MSF.353-356.37
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we study mass transport in SiC powder charge, employed as a source of reactive species in SiC bulk crystal growth, coupled with the species transport in the clearance between the powder and the seed. The study is aimed at finding correlation between growth conditions and powder evolution during a long-term growth process. We also examine how the growth conditions and the powder properties (porosity and mean size of SiC granule) influence SIC growth rate at the seed. The theoretical results are compared with available experimental data.
引用
收藏
页码：37 / 40
页数：4
相关论文
共 50 条
  • [41] Growth of bulk AlN and GaN single crystals by sublimation
    Balkas, CM
    Sitar, Z
    Zheleva, T
    Bergman, L
    Shmagin, IK
    Muth, JF
    Kolbas, R
    Nemanich, R
    Davis, RF
    III-V NITRIDES, 1997, 449 : 41 - 46
  • [42] Sublimation growth of AlN bulk crystals in Ta crucibles
    Mokhov, EN
    Avdeev, OV
    Barash, IS
    Chemekova, TY
    Roenkov, AD
    Segal, AS
    Wolfson, AA
    Makarov, YN
    Ramm, MG
    Helava, H
    JOURNAL OF CRYSTAL GROWTH, 2005, 281 (01) : 93 - 100
  • [43] Faceted growth of SiC bulk crystals
    Matukov, ID
    Kalinin, DS
    Bogdanov, MV
    Karpov, SY
    Ofengeim, DK
    Ramm, MS
    Barash, JS
    Mokhov, EN
    Roenkov, AD
    Vodakov, YA
    Ramm, MG
    Helava, H
    Makarov, YN
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 63 - 66
  • [44] An analysis of seed graphitization for sublimation growth of SiC bulk crystal
    Li, HQ
    Chen, XL
    Ni, DQ
    Wu, X
    DIAMOND AND RELATED MATERIALS, 2004, 13 (01) : 151 - 156
  • [45] Hybrid physical-chemical vapor transport growth of SiC bulk crystals
    Fanton, M. A.
    Li, Q.
    Polyakov, A. Y.
    Cavalero, R. L.
    Ray, R. G.
    Weiland, B. E.
    Skowronski, M.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 103 - +
  • [46] Increase of SiC sublimation growth rate by optimizing of powder packaging
    Wang, Xiaolin
    Cai, Dang
    Zhang, Hui
    JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 122 - 132
  • [47] The effect of source powder height on the growth rate of 3C-SiC grown by the sublimation technique
    Jayatirtha, HN
    Spencer, MG
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 61 - 64
  • [48] Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals
    Pons, M
    Blanquet, E
    Dedulle, JM
    Garcon, I
    Madar, R
    Bernard, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (11) : 3727 - 3735
  • [49] Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals
    Inst Natl Polytechnique de Grenoble, Saint Martin D'Heres, France
    J Electrochem Soc, 11 (3727-3735):
  • [50] Sublimation growth of bulk AIN crystals: process temperature and growth rate
    Epelbaum, BM
    Bickermann, M
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1537 - 1540
12345