On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

被引：44
|
作者：
Lemell, C. [1 ]
El-Said, A. S.
Meissl, W.
Gebeshuber, I. C.
Trautmann, C.
Toulemonde, M.
Burgdoerfer, J.
Aumayr, F.
机构：
[1] Vienna Univ Technol, Inst Theoret Phys, A-1040 Vienna, Austria
[2] Mansoura Univ, Fac Sci, Dept Phys, Mansoura 35516, Egypt
[3] Vienna Univ Technol, Inst Allgemeine Phys, A-1040 Vienna, Austria
[4] GSI Darmstadt, D-64291 Darmstadt, Germany
[5] CNRS, Ctr Interdisciplinaire Rech Ions Laser, Lab Commun CEA, UCBN ENSICAEN, F-14070 Caen, France
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 10期
关键词：
hillock formation; ion-insulator interactions; nanostructuring;
D O I：
10.1016/j.sse.2007.06.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (similar to GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1398 / 1404
页数：7
相关论文
共 50 条
  • [31] Interaction of highly charged ions with surfaces
    Aust J Phys, 2 (527-541):
  • [32] Interaction of highly charged ions with surfaces
    Burgdorfer, J
    Reinhold, C
    Hagg, L
    Meyer, F
    AUSTRALIAN JOURNAL OF PHYSICS, 1996, 49 (02): : 527 - 541
  • [33] Potential sputtering of hydrogen atoms on various surfaces with slow highly-charged ions
    Yamazaki, Y
    Kuroki, K
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2002, 6 (02): : 169 - 179
  • [34] Creation of nanohillocks on CaF2 surfaces by single slow highly charged ions
    El-Said, A. S.
    Heller, R.
    Meissl, W.
    Ritter, R.
    Facsko, S.
    Lemell, C.
    Solleder, B.
    Gebeshuber, I. C.
    Betz, G.
    Toulemonde, M.
    Moeller, W.
    Burgdoerfer, J.
    Aumayr, F.
    PHYSICAL REVIEW LETTERS, 2008, 100 (23)
  • [35] Observation of internal dielectronic excitation with slow highly charged lead ions hitting surfaces
    Hanafy, H
    Björkhage, M
    Leontin, S
    Lindroth, E
    Pesic, ZD
    Rosner, B
    Weimer, J
    Vikor, G
    Schuch, R
    PHYSICA SCRIPTA, 2001, T92 : 47 - 50
  • [36] Phase Diagram for Nanostructuring CaF2 Surfaces by Slow Highly Charged Ions
    El-Said, A. S.
    Wilhelm, R. A.
    Heller, R.
    Facsko, S.
    Lemell, C.
    Wachter, G.
    Burgdoerfer, J.
    Ritter, R.
    Aumayr, F.
    PHYSICAL REVIEW LETTERS, 2012, 109 (11)
  • [37] Slow Highly Charged Ions by Electrostatic Deceleration
    Safvan, C. P.
    Rajput, Jyoti
    Roy, A.
    Kanjilal, D.
    Ahuja, R.
    XXVII INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC AND ATOMIC COLLISIONS (ICPEAC 2011), PTS 1-15, 2012, 388
  • [38] Slow highly charged ions for applications in nanotechnology
    Kentsch, Ulrich
    Landgraf, Steffen
    Zschornack, Günter
    Großmann, Frank
    Ovsyannikov, Vladimir P.
    Ullmann, Falk
    VDI Berichte, 2003, (1803): : 109 - 112
  • [39] Slow highly charged ions for applications in nanotechnology
    Kentsch, U
    Landgraf, S
    Zschornack, G
    Grossmann, F
    Ovsyannikov, VP
    Ullmann, F
    NANOFAIR 2003: NEW IDEAS FOR INDUSTRY, 2003, 1803 : 109 - 112
  • [40] The HITRAP facility for slow highly charged ions
    Herfurth, F.
    Andelkovic, Z.
    Barth, W.
    Chen, W.
    Dahl, L. A.
    Fedotova, S.
    Gerhard, P.
    Kaiser, M.
    Kester, O. K.
    Kluge, H-J
    Kotovskiy, N.
    Maier, M.
    Maass, B.
    Neidherr, D.
    Quint, W.
    Ratzinger, U.
    Reiter, A.
    Schempp, A.
    Stoehlker, Th
    Vormann, H.
    Vorobjev, G.
    Yaramyshev, S.
    PHYSICA SCRIPTA, 2015, T166
12345