Extreme ultraviolet source radiated from pinch plasma for semiconductor manufacturing

被引：3
|
作者：
Zhang, C. H. [1 ]
Katsuki, S. [2 ]
Akiyama, H. [2 ]
Xu, D. G. [1 ]
机构：
[1] Harbin Inst Technol, Dept Elect Engn, Harbin 150001, Peoples R China
[2] Kumamoto Univ, Dept Elect & Comp Engn, Kumamoto 860855, Japan
来源：
MICRO & NANO LETTERS | 2006年 / 1卷 / 02期
关键词：
D O I：
10.1049/mnl:20065062
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Plasma extreme ultraviolet (EUV) source is regarded as the most promising source of EUV radiation as intensive research is underway over the world. A top priority issue for implementing EUV lithography is to upgrade the EUV power extensively. In the development of Z-pinch plasma EUV source, xenon gas is used for the target. The Z-pinch plasma was driven by pulsed current with an amplitude of 30 kA and pulse duration of 100 ns. Pinhole imaging, EUV spectrograph and an in-band EUV energy monitor were used to characterise the EUV emission from the Z-pinch discharge plasma. In order to improve the conversion efficiency (CE) from input electric energy to EUV radiation, a solid tin rod was also used as target material. The experimental analyses have demonstrated that the CE was as high as 1.5%.
引用
收藏
页码：99 / 102
页数：4
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