A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

被引：1

作者：

Chen, J. ^{[1
]}

Cornagliotti, E. ^{[2
]}

Simoen, E. ^{[2
]}

Hieckmann, E. ^{[1
]}

Weber, J. ^{[1
]}

Poortmans, J. ^{[2
]}

机构：

[1] Tech Univ Dresden, Inst Appl Phys, D-01062 Dresden, Germany

[2] IMEC, B-3001 Louvain, Belgium

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 08期

关键词：

multicrystalline silicon; grain boundaries; DLTS; recombination activity; interface states; BEAM-INDUCED CURRENT; ELECTRICAL-ACTIVITY; CONTAMINATION; CHARACTER; POLYCRYSTALLINE; DEFECTS; TRAPS;

D O I：

10.1002/pssr.201105225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multicrystalline silicon (mc-Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Sigma 3 and Sigma 9 GBs in me-Si. The density of interface states close to midgap is found comparable for both as-grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Sigma 3 GBs is stronger than for Sigma 9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc-Si based solar cells. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：277 / 279

页数：3

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