Dose Rate Switching Technique on ELDRS-Free Bipolar Devices

被引：9
|
作者：
Boch, J. [1 ]
Michez, A. [1 ]
Rousselet, M. [1 ]
Dhombres, S. [1 ]
Touboul, A. D. [1 ]
Vaille, J. -R. [1 ]
Dusseau, L. [1 ]
Lorfevre, E. [2 ]
Chatry, N. [3 ]
Sukhaseum, N. [3 ]
Saigne, F. [1 ]
机构：
[1] Univ Montpellier, CNRS, UMR 5214, IES,UM2, F-34095 Montpellier 5, France
[2] Ctr Natl Etud Spatiales, 18 Ave Edouard Belin, F-31055 Toulouse, France
[3] TRAD, F-31670 Labege, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2016年 / 63卷 / 04期
关键词：
Bipolar junction transistor; dose rate; ELDRS; switching experiment; total dose; RATE SENSITIVITY ELDRS; LINEAR CIRCUITS; INDUCED DEGRADATION; GAIN DEGRADATION; RATE IRRADIATION; PHYSICAL MODEL; RADIATION; TRANSISTORS; MECHANISMS; HYDROGEN;
D O I：
10.1109/TNS.2015.2512620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms of hardness assurance. It is shown, for devices that do not show ELDRS, that a time is required before the switched devices reach the LDR curve. As a solution, it is proposed to apply an annealing between the HDR and the LDR irradiation.
引用
收藏
页码：2065 / 2071
页数：7
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