Physical model for the low-dose-rate effect in bipolar devices

被引：60
|
作者：
Boch, J. [1 ]
Saigne, F.
Schrimpf, R. D.
Vaille, J. -R.
Dusseau, L.
Lorfevre, E.
机构：
[1] Univ Montpellier 2, CEM2, F-34095 Montpellier 5, France
[2] Vanderbilt Univ, Nashville, TN 37235 USA
[3] Ctr Natl Etud Spatiales, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
bipolar junction transistor; enhanced low-dose-rate sensitivity (ELDRS); elevated temperature irradiation; initial recombination; switching experiment; total dose;
D O I：
10.1109/TNS.2006.886008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical model of the dose-rate effect in bipolar junction transistors is proposed, based on competition between trapping and recombination of radiation-induced carriers in the oxide. The initial recombination of the carriers is considered in this model, taking into account the temperature effect. The general trends obtained with this model are in very good agreement with experimental data. It is also shown that the, dose rate effect depends significantly on oxide quality.
引用
收藏
页码：3655 / 3660
页数：6
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