Varactor controlled Gunn oscillator at W-band

被引：1
|
作者：
Kumar, D [1 ]
Sarin, SS [1 ]
机构：
[1] DEAL, Dehra Dun, Uttar Pradesh, India
来源：
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1999年 / 20卷 / 01期
关键词：
GaAs; Power Output; Reverse Bias; Power Variation; Linear Frequency;
D O I：
10.1023/A:1021703701699
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the experimental circuit and measured performance of varactor tuned Gunn oscillator at W-band. The power output of 12.5 dBm has been achieved when packaged GaAs Gunn diode is used. Linear frequency excursion of 150 MHz with power variation of 1 dB has been observed when varactor was given reverse bias from 0 to 20 volts. GaAs hyperabrupt varactor is used in parallel to gunn diode at a distance of odd multiple of (sic)/2 in waveguide channel.
引用
收藏
页码：77 / 82
页数：6
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