W-BAND MONOLITHIC OSCILLATOR USING INALAS/INGAAS HEMT

被引：12
|
作者：
KWON, Y
PAVLIDIS, D
TUTT, M
NG, GI
LAI, R
BROCK, T
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,CTR SPACE TERAHERTZ TECHNOL,ANN ARBOR,MI 48109
[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 18期
关键词：
Microwave devices and components; Oscillators;
D O I：
10.1049/el:19900914
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was - 7 dBm at the chip level. This is the first report of an InAIAs/InGaAs monolithic oscillator operating at the Wband. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1425 / 1426
页数：2
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