High current density in light-emitting transistors of organic single crystals

被引：191
|
作者：
Takenobu, Taishi [1 ,2 ]
Bisri, Satria Zulkarnaen [1 ]
Takahashi, Tetsuo [1 ]
Yahiro, Masayuki [3 ]
Adachi, Chihaya [3 ]
Iwasa, Yoshihiro [1 ,2 ]
机构：
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Kyushu Univ, Ctr Future Chem, Nishi, Fukuoka 8190395, Japan
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 06期
关键词：
D O I：
10.1103/PhysRevLett.100.066601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We measured the external electroluminescence quantum efficiency (eta(ext)) in light-emitting field-effect transistors (LETs) made of organic single crystals and found that, in the ambipolar transport region, eta(ext) is not degraded up to several hundreds A/cm(2) current-density range, which is 2 orders of magnitude larger than that achieved in conventional organic light-emitting diodes. The present result indicates the single-crystal organic LET is a promising device structure that is free from various kinds of nonradiative losses such as exciton dissociation near electrodes and exciton annihilations.
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页数：4
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