Current-Confinement Structure and Extremely High Current Density in Organic Light-Emitting Transistors

被引：85
|
作者：
Sawabe, Kosuke [2 ]
Imakawa, Masaki [1 ]
Nakano, Masaki [3 ]
Yamao, Takeshi [4 ]
Hotta, Shu [4 ]
Iwasa, Yoshihiro [3 ,5 ,6 ]
Takenobu, Taishi [1 ]
机构：
[1] Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Tokyo 1698555, Japan
[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] RIKEN, Adv Sci Inst, Correlated Elect Res Grp, Wako, Saitama 3510198, Japan
[4] Kyoto Inst Technol, Dept Macromol Sci & Engn, Kyoto 6068585, Japan
[5] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan
[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 46期
关键词：
organic transistors; ambipolar transistors; single-crystal transistors; light-emitting transistors; THIOPHENE/PHENYLENE CO-OLIGOMERS; FIELD-EFFECT TRANSISTORS; HIGH-EFFICIENCY; RECOMBINATION ZONE; CHARGE INJECTION; HIGH-MOBILITY; TRANSPORT; DEVICES; DIODES; ELECTROLUMINESCENCE;
D O I：
10.1002/adma.201202252
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2), which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.
引用
收藏
页码：6141 / 6146
页数：6
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