Current-Confinement Structure and Extremely High Current Density in Organic Light-Emitting Transistors

被引：85

作者：

Sawabe, Kosuke ^{[2
]}

Imakawa, Masaki ^{[1
]}

Nakano, Masaki ^{[3
]}

Yamao, Takeshi ^{[4
]}

Hotta, Shu ^{[4
]}

Iwasa, Yoshihiro ^{[3
,5
,6
]}

Takenobu, Taishi ^{[1
]}

机构：

[1] Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Tokyo 1698555, Japan

[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

[3] RIKEN, Adv Sci Inst, Correlated Elect Res Grp, Wako, Saitama 3510198, Japan

[4] Kyoto Inst Technol, Dept Macromol Sci & Engn, Kyoto 6068585, Japan

[5] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 46期

关键词：

organic transistors; ambipolar transistors; single-crystal transistors; light-emitting transistors; THIOPHENE/PHENYLENE CO-OLIGOMERS; FIELD-EFFECT TRANSISTORS; HIGH-EFFICIENCY; RECOMBINATION ZONE; CHARGE INJECTION; HIGH-MOBILITY; TRANSPORT; DEVICES; DIODES; ELECTROLUMINESCENCE;

D O I：

10.1002/adma.201202252

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2), which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

引用

页码：6141 / 6146

页数：6

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