High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors

被引：239
|
作者：
Bisri, Satria Zulkarnaen [1 ]
Takenobu, Taishi [1 ,2 ]
Yomogida, Yohei [1 ]
Shimotani, Hidekazu [1 ]
Yamao, Takeshi [3 ]
Hotta, Shu [3 ]
Iwasa, Yoshihiro [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3300012, Japan
[3] Kyoto Inst Technol, Dept Macromol Sci & Engn, Sakyo Ku, Kyoto 6068585, Japan
来源：
ADVANCED FUNCTIONAL MATERIALS | 2009年 / 19卷 / 11期
关键词：
FIELD-EFFECT TRANSISTORS; OPTICAL GAIN; AMBIPOLAR; EMISSION;
D O I：
10.1002/adfm.200900028
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence charcteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
引用
收藏
页码：1728 / 1735
页数：8
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