Adsorption of metal atoms on MoSi2N4 monolayer: A first principles study

被引:86
|
作者
Cui, Zhen [1 ,2 ]
Yang, Kunqi [1 ]
Ren, Kai [3 ]
Zhang, Shuang [1 ]
Wang, Lu [1 ]
机构
[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China
[2] Shaanxi Civil Mil Integrat Key Lab Intelligence Co, Xian 710048, Peoples R China
[3] Nanjing Forestry Univ, Sch Mech & Elect Engn, Nanjing 211189, Peoples R China
基金
中国国家自然科学基金;
关键词
Adsorption; Magnetic; Metal atom; Work function; MoSi; 2; N; 4; monolayer; LARGE VALLEY POLARIZATION; HIGH CURIE-TEMPERATURE; MAGNETIC-PROPERTIES; 2-DIMENSIONAL MATERIALS; WORK FUNCTION; GRAPHENE; MOS2; GAS; 1ST-PRINCIPLES; DIODES;
D O I
10.1016/j.mssp.2022.107072
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The magnetic and electronic behaviors of metal atoms adsorbed MoSi2N4 monolayer have been systematically researched by density functional theory. The results reveal that the most stable sites of MoSi2N4 monolayer adsorbed by various metal are diverse. The band structures of the Li-MoSi2N4 system exhibit the nonmagnetic metal behavior, while the Pd-MoSi2N4, Pt-MoSi2N4, and Zn-MoSi2N4 systems indicate nonmagnetic semi-conductors. Meanwhile, K-MoSi2N4 and Na-MoSi2N4 systems emerge magnetic metal character, and the Ag-MoSi2N4, Au-MoSi2N4, Bi-MoSi2N4, Fe-MoSi2N4, Mn-MoSi2N4, Pb-MoSi2N4, and V-MoSi2N4 systems appear magnetic semiconductor features, while the magnetic moments are 1.00 mu B, 1.00 mu B, 1.00 mu B, 3.00 mu B, 5.87 mu B, 4.26 mu B, 0.37 mu B, 0.52 mu B, 1.94 mu B, 2.86 mu B, 3.85 mu B, and 4.84 mu B, respectively. Furthermore, the charge transfer arises between the metal atoms and MoSi2N4. Importantly, the work function of MoSi2N4 system decreases greatly after metal adsorption, in particular, the work function of Li-MoSi2N4 is lower 74.95% than that of pristine MoSi2N4. Therefore, it indicates that metal atoms adsorbed MoSi2N4 systems can be used to manufacture spintronic and vacuum electron emission nanodevices.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping
    Bafekry, A.
    Faraji, M.
    Fadlallah, Mohamed M.
    Khatibani, A. Bagheri
    Ziabari, A. abdolahzadeh
    Ghergherehchi, M.
    Nedaei, Sh
    Shayesteh, S. Farjami
    Gogova, D.
    APPLIED SURFACE SCIENCE, 2021, 559 (559)
  • [42] Promising Photoelectronic Properties of Two-Dimensional MoSi2N4/WS2 Heterojunction: A First-Principles Study
    Mao, Yuliang
    Chen, Hao
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (08) : 5827 - 5832
  • [43] Adsorption and sensing mechanism of B-doped MoSi2N4 monolayer towards hazardous gases: A DFT investigation
    Dong, Jianhong
    Huang, Rui
    Hou, Dejian
    Guo Yanqing
    Li Hongliang
    SURFACES AND INTERFACES, 2023, 40
  • [44] Promising Properties of a Sub-5-nm Monolayer MoSi2N4 Transistor
    Huang, Junsheng
    Li, Ping
    Ren, Xiaoxiong
    Guo, Zhi-Xin
    PHYSICAL REVIEW APPLIED, 2021, 16 (04)
  • [45] Optoelectronic properties of bilayer van der Waals WSe2/MoSi2N4 heterostructure:A first-principles study
    Zhang, Zhengwen
    Chen, Guoxing
    Song, Aiqin
    Cai, Xiaolin
    Yu, Weiyang
    Jia, Xingtao
    Jia, Yu
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2022, 144
  • [46] Quantum Effect Enables Large Elastocaloric Effect in Monolayer MoSi2N4 and Graphene
    Yin, Yan
    He, Weiwei
    Tang, Wei
    Yi, Min
    ADVANCED QUANTUM TECHNOLOGIES, 2025, 8 (01)
  • [47] The First-Principle Study on Tuning Optical Properties of MA2Z4 by Cr Replacement of Mo Atoms in MoSi2N4
    Li, Yongsheng
    Li, Jiawei
    Wan, Lingyu
    Li, Jiayu
    Qu, Hang
    Ding, Cui
    Li, Mingyang
    Yu, Dan
    Fan, Kaidi
    Yao, Huilu
    NANOMATERIALS, 2022, 12 (16)
  • [48] Quantum transport of short-gate MOSFETs based on monolayer MoSi2N4
    Ye, Bingjie
    Jiang, Xuecheng
    Gu, Yan
    Yang, Guofeng
    Liu, Yushen
    Zhao, Huiqin
    Yang, Xifeng
    Wei, Chunlei
    Zhang, Xiumei
    Lu, Naiyan
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (11) : 6616 - 6626
  • [49] Metal adsorption on monolayer blue phosphorene: A first principles study
    Khan, Imran
    Son, Jicheol
    Hong, Jisang
    PHYSICS LETTERS A, 2018, 382 (04) : 205 - 209
  • [50] Cu-Doped MoSi2N4 Monolayer as a Potential NH3 Sensor
    Linghu, Yaoyao
    Tong, Tianyue
    Wu, Chao
    CHEMPHYSCHEM, 2023, 24 (06)