Cu-Doped MoSi2N4 Monolayer as a Potential NH3 Sensor

被引:4
|
作者
Linghu, Yaoyao [1 ,2 ]
Tong, Tianyue [1 ,2 ]
Wu, Chao [3 ]
机构
[1] North Univ China, Sch Mat Sci & Engn, Taiyuan 030051, Peoples R China
[2] North Univ China, Adv Energy Mat & Syst Inst, Taiyuan 030051, Peoples R China
[3] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol, Xian 710054, Peoples R China
关键词
MoSi2N4; monolayer; copper doping; gas sensors; first principles; CHEMICAL-VAPOR-DEPOSITION; GAS SENSOR; ADSORPTION; PERFORMANCE; CANDIDATE; GRAPHENE; COHP; H-2;
D O I
10.1002/cphc.202200712
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cu doped MoSi2N4 monolayer (Cu-MoSi2N4) was firstly proposed to analyze adsorption performances of common gas molecules including O-2, N-2, CO, NO, NO2, CO2, SO2, H2O, NH3 and CH4 via density functional theory (DFT) combining with non-equilibrium Green's function (NEGF). The electronic transport calculations indicate that Cu-MoSi2N4 monolayer has high sensitivity for CO, NO, NO2 and NH3 molecules. However, only NH3 molecule adsorbs on the Cu-MoSi2N4 monolayer with moderate strength (-0.55 eV) and desorbs at room temperature (2.36x10(-3) s). Thus, Cu-MoSi2N4 monolayer is demonstrated as a potential NH3 sensor.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Cu-doped MoSi2N4 monolayer as a highly efficient catalyst for CO reduction toward C2+products
    Linghu, Yaoyao
    Tong, Tianyue
    Wu, Chao
    APPLIED SURFACE SCIENCE, 2023, 609
  • [2] Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
    Yang, Chen
    Song, Zhigang
    Sun, Xiaotian
    Lu, Jing
    PHYSICAL REVIEW B, 2021, 103 (03)
  • [3] Performance limit of monolayer MoSi2N4 transistors
    Sun, Xiaotian
    Song, Zhigang
    Huo, Nannan
    Liu, Shiqi
    Yang, Chen
    Yang, Jie
    Wang, Weizhou
    Lu, Jing
    JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (41) : 14683 - 14698
  • [4] Electrical Contacts in Monolayer MoSi2N4 Transistors
    Li, Ying
    Xu, Lianqiang
    Yang, Chen
    Xu, Linqiang
    Liu, Shiqi
    Yang, Zongmeng
    Li, Qiuhui
    Dong, Jichao
    Yang, Jie
    Lu, Jing
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (37) : 49496 - 49507
  • [5] Inducing Half-Metallicity in Monolayer MoSi2N4
    Ray, Avijeet
    Tyagi, Shubham
    Singh, Nirpendra
    Schwingenschlogl, Udo
    ACS OMEGA, 2021, 6 (45): : 30371 - 30375
  • [6] Electronic properties and quasiparticle model of monolayer MoSi2N4
    Wang, Zhenwei
    Kuang, Xueheng
    Yu, Guodong
    Zhao, Peiliang
    Zhong, Hongxia
    Yuan, Shengjun
    PHYSICAL REVIEW B, 2021, 104 (15)
  • [7] Thermodynamics and electronic structure of edges in monolayer MoSi2N4
    Burte, Atharva S.
    Abdelrahman, Omar
    Muniz, Andre R.
    Ramasubramaniam, Ashwin
    JOURNAL OF APPLIED PHYSICS, 2024, 136 (03)
  • [8] Tuning transport coefficients of monolayer MoSi2N4 with biaxial strain*
    Guo, Xiao-Shu
    Guo, San-Dong
    CHINESE PHYSICS B, 2021, 30 (06)
  • [9] Strain modulation of electronic and optical properties of monolayer MoSi2N4
    Lv, Xiurui
    Xu, Yan
    Mao, Bangyao
    Liu, Guipeng
    Zhao, Guijuan
    Yang, Jianhong
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2022, 135
  • [10] Tuning transport coefficients of monolayer MoSi2N4 with biaxial strain
    郭小姝
    郭三栋
    Chinese Physics B, 2021, (06) : 533 - 538